| PART |
Description |
Maker |
| TLP701 |
INDUSTRIAL INVERTERS INVERTER FOR AIR CONDITIONERS IGBT/POWER MOS FET GATE DRIVE
|
Toshiba Semiconductor
|
| PS9402 PS9402-E3-AX PS9402-V-AX PS9402-V-E3-AX |
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT, POWER MOS FET GATE DRIVE, 16-PIN SSOP PHOTOCOUPLER
|
California Eastern Labs
|
| TLP350 |
Inverter for Air Conditioner, IGBT/Power MOS FET Gate Drive, Industrial Inverter
Photocouplers - Photo-IC Output
|
Toshiba Semiconductor
|
| IP2030 |
30V MCT/IGBT Gate Driver(MOS???纭??浣??/缁????????浣???ㄩ┍?ㄥ?)
|
Intersil Corporation
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| APT5017BLC APT5017SLC APT10086BLC APT10086SLC |
POWER MOS VI 500V 30A 0.170 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| 8810 |
N-channel power MOS field effect tube
|
SHENZHEN FUMAN ELECTRON...
|
| 7001218 700624 700610 700530 |
3M Moisture Barrier Bag Dri-Shield 2000
3M Moisture Barrier Bag Dri-Shield 2000
|
3M Electronics
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| APT25GP90BDQ1G APT25GP90BDQ1 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT15GP90BDQ1G APT15GP90BDQ1 |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
